新品發(fā)布
New Product Release
Xiner Semiconductor has launched a new 1200V_1000A C5 power module, which uses 1200V SiC MOSFETs with high performance and high reliability. Econodual compatible. The product is characterized by ultra-low Rds(on), ultra-low switching loss, high current density, low thermal resistance, and low parasitic inductance design.
芯能半導體新推出一款1200V_1000A C5模塊，該模塊采用高性能、高可靠性的1200V SiC MOSFET。封裝兼容Econodual。該產(chǎn)品具有超低的Rds(on)、超低開(kāi)關(guān)損耗、高電流密度、低熱阻、低寄生電感設計的特點(diǎn)。
Related products/相關(guān)產(chǎn)品：
XNC1000BT12YA-J33 2mΩ / XNC1000BT12YA-J33 2mΩ
1200V C5 Half-bridge power module /1200V C5半橋功率模塊
Product Characteristics/產(chǎn)品特性
Product Features/產(chǎn)品特點(diǎn)
1、1200V SiC MOSFET /1200V SiC MOSFET
2、C5 package (compatible with Econodual) /C5封裝（兼容Econodual）
3、Integrated diode, optimized thermal resistance /集成體二極管，優(yōu)化了熱阻
4、Excellent grid oxide reliability /優(yōu)秀的柵極氧化層可靠性
5、Press FIT Pin /PressFit引腳
Competitive Advantage/競爭優(yōu)勢
1、Very low module parasitic inductance in similar packages /同類(lèi)封裝中，非常低的模塊寄生電感
2、Silver sintering process, very superior heat dissipation performance /銀燒結工藝，非常優(yōu)越的散熱性能
Application Value/應用價(jià)值
1、Lower voltage overshoot/更低的電壓過(guò)沖
2、Low on-off loss/低導通損耗
3、Low switching loss/低開(kāi)關(guān)損耗
4、Symmetrical module design realizes symmetrical upper and lower arm switching behavior/模塊采用對稱(chēng)設計實(shí)現對稱(chēng)的上下橋臂開(kāi)關(guān)行為
5、Low thermal resistance and high performance AMB/低熱阻高性能AMB
Application Area/應用領(lǐng)域
Topological Structure/拓撲結構
Test Waveform/測試波形
1x current switch waveform @175℃
1倍電流開(kāi)關(guān)波形@175℃
1x current reverse recovery waveform @175℃
1倍電流反向恢復波形@175℃
※ ：For specific product information, please consult our sales personnel or request product specifications（service@invsemi.com）.
產(chǎn)品具體信息可向我司銷(xiāo)售人員咨詢(xún)或索取產(chǎn)品規格（service@invsemi.com）。
